Semiconductor memory device having a three-dimensional cell...

Details Semiconductor memory device having a three-dimensional cell... Semiconductor memory device having a three-dimensional cell...

2007-05-30

2009-08-04

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S051000, C365S148000, C365S189160, C365S230030

Reexamination Certificate

active

07570511

ABSTRACT:
A semiconductor memory device includes a plurality of cell array layers including a plurality of word lines extending in a first direction, a plurality of bit lines extending in a second direction that intersects the first direction, and a plurality of memory cells disposed at intersections of the word lines and the bit lines. Each of the word lines has a word line position, each of the bit lines has a bit line position, and each of the memory cells includes a variable resistance device in series with a diode. The cell array layers are arranged in layers in a third direction that is perpendicular to the first and second directions. The bit lines of each of the cell array layers having a same bit line position are connected to a common column selector transistor, or the word lines of the cell array layers having a same word line position are connected to a common word line driver.

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