Semiconductor memory device having a test control circuit

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital logic testing

Reexamination Certificate

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Details

C714S718000

Reexamination Certificate

active

07421636

ABSTRACT:
A semiconductor memory device having a test control circuit includes a cell array, a BIST (built-in self test) circuit adapted and configured to perform a BIST operation on the cell array, a BISR (built-in self repair) circuit adapted and configured to perform a BISR operation on the cell array, and a command decoder adapted and configured to generate a first control signal for selecting a BIST operation by the BIST circuit or a test by an external tester and a second control signal for controlling a BISR operation by the BISR circuit. As a result, a test by an external tester, a BIST (built-in self test) and a BISR (built-in self repair) are individually performed in response to an additional command signal.

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