Semiconductor memory device having a SOI structure

Details Semiconductor memory device having a SOI structure Semiconductor memory device having a SOI structure

1998-08-14

2000-02-08

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257350, 257361, 257370, 257577, 257587, H01L 2184

Patent

active

060230894

ABSTRACT:
A semiconductor device, and corresponding method of fabrication, includes a device isolation region formed in a semiconductor layer of a SOI substrate, the semiconductor layer having a first type of conductivity, a first impurity region made of portions of the semiconductor layer, and second and third impurity regions formed in the semiconductor layer outside of the first impurity region, the second and third impurity regions having a second type of conductivity. A base electrode is electrically connected to the first impurity region, a bit line electrode is electrically connected to the second impurity region and a capacitor is electrically connected to the third impurity region. The base electrode may be formed by etching a first contact hole through a first interlayer insulating film formed over the semiconductor layer and filling the first contact hole with an electrically conductive material. The bit line electrode may be electrically connected to the second impurity region by forming a second interlayer insulating film formed over the first interlayer insulating film including the base electrode, etching through the first and second interlayer insulating films to form a second contact hole, filling the second contact hole with a first contact plug, and forming the bit line electrode. The capacitor may be electrically connected to the third impurity region by forming a third interlayer insulating film over the second interlayer insulating film including the bit line electrode, etching through the first, second and third interlayer insulating films to form a third contact hole, filling the third contact hole with a second contact plug, and electrically connecting the capacitor electrode to the second contact plug.

REFERENCES:
patent: 5763931 (1998-06-01), Sugiyama
patent: 5838043 (1998-11-01), Yuan

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