Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-05
2009-10-27
Purvis, Sue (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S532000, C257SE27033, C257SE27097
Reexamination Certificate
active
07608880
ABSTRACT:
A semiconductor memory device comprises a cell region including a plurality of unit memory cells, and a peripheral circuit region, the peripheral circuit region including a plurality of peripheral circuit devices for operating the plurality of memory cells and at least one operating capacitor formed adjacent to at least one peripheral circuit device at a pseudo circuit pattern region.
REFERENCES:
patent: 5969420 (1999-10-01), Kuge et al.
patent: 6635935 (2003-10-01), Makino
patent: 6777751 (2004-08-01), Yamaoka
patent: 2002/0003270 (2002-01-01), Makino
patent: 2002/0130345 (2002-09-01), Saigoh et al.
patent: 2003/0099144 (2003-05-01), Kim et al.
patent: 2004/0108539 (2004-06-01), Kim
patent: 2005/0280031 (2005-12-01), Yano
patent: 02298068 (1990-12-01), None
Han Gong-Heum
Kim Su-Yeon
Lim Bo-Tak
Son Jong-Pil
F. Chau & Assoc. LLC
Purvis Sue
Roland Christopher M
Samsung Electronics Co,. Ltd.
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