semiconductor memory device having a flash write function

Details semiconductor memory device having a flash write function semiconductor memory device having a flash write function

1995-09-26

1997-07-22

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Precharge

365233, 365149, G11C 700

Patent

active

056509707

ABSTRACT:
In a VRAM having a flash write function, paired bit lines in a memory cell array are divided into first paired bit lines on the side of memory cells and a pre-charge equalizing circuit, and second paired bit lines on the side of paired column selecting transfer gates, by paired bit line transfer gates. One end of first and second flash write MOS transistors is connected to bit lines of the second paired bit lines. The other ends are set at a bit line pre-charge potential or a predetermined reference potential by a potential changeover circuit. With the potential changeover circuit, not only the original flash write function but also a bit line equalizing function can be carried out. Thus, it is possible to pre-charge bit lines sufficiently in a short period of time even when the power source potential is low, and to sense data read from memory cells with precision.

REFERENCES:
patent: 4811301 (1989-03-01), Houston
patent: 4813021 (1989-03-01), Kai et al.
patent: 5010518 (1991-04-01), Toda
patent: 5255243 (1993-10-01), Kitazawa
patent: 5404325 (1995-04-01), Shibata
patent: 5495443 (1996-02-01), Koike

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