Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2007-07-31
2009-10-27
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S203000, C365S230030
Reexamination Certificate
active
07609571
ABSTRACT:
Embodiments of the invention include a semiconductor memory device and a method for operating the semiconductor memory device. The invention includes a semiconductor memory device comprising a memory cell array block including a plurality of first memory cells connected to a plurality of first bit lines and a plurality of second memory cells connected to a plurality of second bit lines. The semiconductor memory device further includes a first sensing block disposed on a first side of the memory cell array block, a second sensing block disposed on a second side of the memory cell array block, and a control unit receiving a sensing block selection address signal, wherein, when the sensing block selection address signal specifies the first sensing block, the control unit enables the first sensing block and disables the second sensing block.
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Nguyen Hien N
Nguyen Tuan T
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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