Semiconductor memory device having a control unit receiving...

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

Reexamination Certificate

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Details

C365S203000, C365S230030

Reexamination Certificate

active

07609571

ABSTRACT:
Embodiments of the invention include a semiconductor memory device and a method for operating the semiconductor memory device. The invention includes a semiconductor memory device comprising a memory cell array block including a plurality of first memory cells connected to a plurality of first bit lines and a plurality of second memory cells connected to a plurality of second bit lines. The semiconductor memory device further includes a first sensing block disposed on a first side of the memory cell array block, a second sensing block disposed on a second side of the memory cell array block, and a control unit receiving a sensing block selection address signal, wherein, when the sensing block selection address signal specifies the first sensing block, the control unit enables the first sensing block and disables the second sensing block.

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