Static information storage and retrieval – Read/write circuit – Signals
Reexamination Certificate
2007-05-10
2008-12-02
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Signals
C365S233100
Reexamination Certificate
active
07460418
ABSTRACT:
A semiconductor memory device and a read data skew control method thereof, in which a point of time when read data is output can he controlled using pad bonding in stack packages. The semiconductor memory device includes a bonding option pad and a delay control circuit that controls the point of time when data is output from an output buffer depending on logic states of a signal applied to the bonding option pad. Thus, when using the semiconductor memory device in stack packages, the read data skew generated as a result of a load on a bonding wire can be compensated by connecting the bonding option pad to ground voltage or a supply voltage.
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Jung Won-chang
Lee Hi-choon
F. Chau & Assoc. LLC
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
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