Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2007-02-20
2007-02-20
Phan, Trong (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S233100
Reexamination Certificate
active
10954530
ABSTRACT:
A memory device according to the present invention includes multiple refresh modes and a refresh controller. A first refresh mode can respectively select one more memory block among a plurality of banks comprising a plurality of blocks and each of all banks. In addition, the first refresh mode may perform a refresh operation with respect to selected memory blocks. The second refresh mode can select a part of the banks and perform a refresh operation of data with a selected bank. The controller may select one of the first and second refresh modes in a refresh operation.
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English language abstract of Korean Publication No. 2002-72020.
Choi Jong-Hyun
Seo Dong-Il
Seo Young-Hun
Marger & Johnson & McCollom, P.C.
Phan Trong
Samsung Electronics Co,. Ltd.
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