Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-10-24
2006-10-24
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S207000, C365S210130
Reexamination Certificate
active
07126867
ABSTRACT:
A semiconductor memory device for outputting or storing a data in response to inputted address and command includes a first cell array for outputting the data to one of a bit line and a bit line bar; a first reference cell block for outputting a reference signal to the other of the bit line and the bit line bar; a sense amplifying block for sensing and amplifying a voltage difference between the bit line and the bit line bar; a first connection block for connecting or disconnecting the first cell array and the first reference cell block to the sense amplifying block; and a floating control block for floating the bit line and the bit line bar if a precharge command signal is activated.
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Ahn Jin-Hong
Kang Hee-Bok
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Nguyen Tuan T.
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