Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-08-01
2009-12-29
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S201000
Reexamination Certificate
active
07639547
ABSTRACT:
Provided is a semiconductor memory device and method that can control internal supply voltages independently. The semiconductor memory device includes a memory cell array, a reference voltage generating unit, an internal reference voltage generating unit, and an internal supply voltage generating unit. The reference voltage generating unit outputs a reference voltage in response to an external voltage. The internal reference voltage generating unit converts the reference voltage into a plurality of internal reference voltages, and outputs the plurality of internal reference voltages. The internal supply voltage generating unit converts the plurality of internal reference voltages into a plurality of internal supply voltages, and outputs the plurality of internal supply voltages. A first internal reference voltage is used to generate a first internal supply voltage and a second internal reference voltage is used to generate a second internal supply voltage.
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Jun Young-hyun
Lim Jong-hyoung
Moon Jang-won
Ho Hoai V
Miles & Onello, LLP
Samsung Electronics Co,. Ltd.
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