Semiconductor memory device for independently controlling...

Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator

Reexamination Certificate

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C365S189070, C365S201000

Reexamination Certificate

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07639547

ABSTRACT:
Provided is a semiconductor memory device and method that can control internal supply voltages independently. The semiconductor memory device includes a memory cell array, a reference voltage generating unit, an internal reference voltage generating unit, and an internal supply voltage generating unit. The reference voltage generating unit outputs a reference voltage in response to an external voltage. The internal reference voltage generating unit converts the reference voltage into a plurality of internal reference voltages, and outputs the plurality of internal reference voltages. The internal supply voltage generating unit converts the plurality of internal reference voltages into a plurality of internal supply voltages, and outputs the plurality of internal supply voltages. A first internal reference voltage is used to generate a first internal supply voltage and a second internal reference voltage is used to generate a second internal supply voltage.

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patent: 6498469 (2002-12-01), Kobayashi
patent: 6552578 (2003-04-01), Cheung et al.
patent: 6600692 (2003-07-01), Tanzawa
patent: 7382677 (2008-06-01), Lee et al.
patent: 2002-258955 (2002-09-01), None
patent: 2003-338548 (2003-11-01), None
patent: 2001-0059032 (2001-07-01), None

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