Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-08-23
2005-08-23
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S201000, C365S225700
Reexamination Certificate
active
06934203
ABSTRACT:
A semiconductor memory device including a plurality of normal cell blocks including a plurality of normal memory cells for storing data, a plurality of redundancy cell blocks, a plurality of redundancy memory cells for substituting for defective normal memory cells, and at least one ECC cell block including a plurality of ECC memory cells, for substituting for defective normal memory cells in response to a mode signal.
REFERENCES:
patent: 4768193 (1988-08-01), Takemae
patent: 6418068 (2002-07-01), Raynham
patent: 11-250695 (1999-09-01), None
patent: 2002-042488 (2002-02-01), None
F. Chau & Associates LLC
Luu Pho M.
Phung Anh
Samsung Electronics Co,. Ltd.
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