Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
1999-05-19
2001-12-11
Ho, Hoai V. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Precharge
C365S190000, C365S233100
Reexamination Certificate
active
06330201
ABSTRACT:
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor memory device, and more particularly to a semiconductor memory device synchronizing with a clock signal and exhibiting a high speed and stable write operation.
Various kinds of the semiconductor memory devices have been known in the art to which the present invention pertains. The most important issues for the semiconductor memory devices are how to improve the data write operation speed and shorten the necessary time for the completion of the data write operation as well as improve the stability in data write operation.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the present invention to provide a novel semiconductor memory device exhibiting a high speed data write operation.
It is a further object of the present invention to provide a novel semiconductor memory device exhibiting a stable data write operation.
The first present invention provides a circuitry for supplying data from a write input/output line pair to a digit line pair for writing the data into memory cells. The circuitry comprises: a balancing device for balancing in voltage level between the write input/output line pair by making a connection of the write input/output line pair; and a controller connected to the balancing device for controlling balancing operations of the balancing device.
The above and other objects, features and advantages of the present invention will be apparent from the following descriptions.
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Ho Hoai V.
NEC Corporation
Young & Thompson
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