Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-01-26
2008-10-21
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S227000, C365S228000
Reexamination Certificate
active
07440352
ABSTRACT:
A semiconductor memory device comprises a plurality of memory cells connected to a plurality of word lines grouped in word line sets. Each of the word line sets is connected to a word line enable signal generation unit which stores information indicating whether data has been written to any of the memory cells connected to the word line set. The word line enable signal generation unit controls refresh operations for memory cells connected to the word line set so that only word lines connected to memory cells that have been programmed are refreshed.
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Hoang Huan
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
Weinberg Michael J
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