Semiconductor memory device capable of preventing oxidation...

Details Semiconductor memory device capable of preventing oxidation... Semiconductor memory device capable of preventing oxidation...

2007-04-17

2007-04-17

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S253000, C438S396000, C257SE27048, C257SE29342

Reexamination Certificate

active

10828206

ABSTRACT:
A semiconductor device and a fabrication method thereof provides a plug structure composed of a diffusion barrier layer formed at the bottom and on the sides of a contact hole and an oxidation barrier layer formed on the diffusion barrier layer that fills up the inside of the contact hole. This invention prevents contact resistance of a bottom electrode and a plug from increasing as well as implementing high-speed operation and improving the reliability of the semiconductor device.

REFERENCES:
patent: 5760474 (1998-06-01), Schuele
patent: 5856704 (1999-01-01), Schuele
patent: 5870121 (1999-02-01), Chan
patent: 6043529 (2000-03-01), Hartner et al.
patent: 6130124 (2000-10-01), Lee
patent: 6180447 (2001-01-01), Park et al.
patent: 6225185 (2001-05-01), Yamazaki et al.
patent: 6225222 (2001-05-01), Yang et al.
patent: 6235603 (2001-05-01), Melnick et al.
patent: 6360423 (2002-03-01), Groll
patent: 6400552 (2002-06-01), Al-Shareef et al.
patent: 6420267 (2002-07-01), Lin et al.
patent: 6465300 (2002-10-01), Kim et al.
patent: 6590246 (2003-07-01), Agarwal
patent: 6624069 (2003-09-01), Lee et al.
patent: 6645779 (2003-11-01), Hong
patent: 2001/0020715 (2001-09-01), Yamasaki et al.
patent: 2002/0006691 (2002-01-01), Kim et al.
patent: 2002/0070404 (2002-06-01), Bruchhaus et al.
patent: 2002/0084481 (2002-07-01), Lian et al.
patent: 1999-10450 (1999-02-01), None
patent: 2001-1595 (2001-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device capable of preventing oxidation... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device capable of preventing oxidation..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device capable of preventing oxidation... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3753481