Semiconductor memory device capable of executing non-periodic re

Details Semiconductor memory device capable of executing non-periodic re Semiconductor memory device capable of executing non-periodic re

1991-07-05

1994-01-11

Pascal, Robert J.

Static information storage and retrieval

Read/write circuit

Data refresh

36518907, G11C 700

Patent

active

052787974

ABSTRACT:
A semiconductor memory device, having cells respectively therein given information through rewriting, i.e., a refreshing operation, capable of performing non-periodic refreshing operations is disclosed. The semiconductor memory element internally includes a refresh request signal generator having a reference memory cell 51 connected to a word line in the memory device. The refresh request signal generator 100A generates refresh request signals only at that moment of erasing of information stored in the memory cell. The outputted refresh request signals cause refresh signals to transfer to the memory cell. Thus, non-periodic refreshing operations can be performed, thereby reducing the power consumption, and increasing the number of data input/output work.

REFERENCES:
patent: 4682306 (1987-07-01), Sakurai et al.
patent: 4982369 (1991-01-01), Tatematsu
patent: 5148063 (1992-09-01), Hotta

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