Error detection/correction and fault detection/recovery – Pulse or data error handling – Memory testing
Reexamination Certificate
2007-09-28
2010-06-08
Trimmings, John P (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Memory testing
C714S005110, C714S030000, C714S042000, C714S718000, C714S720000, C714S721000, C714S731000, C714S736000, C714S744000, C714S745000, C365S201000
Reexamination Certificate
active
07734967
ABSTRACT:
A semiconductor memory device, having a test mode and a normal mode, includes a frequency multiplier and a test command sequence generator. The frequency multiplier receives a test clock signal in the test mode and generates multiple internal test clock signals, each of which has a frequency equal to a frequency of an operation clock signal in the normal mode. The test clock signal has a frequency lower than the frequency of the operation clock signal. The test command sequence generator generates at least one command signal in response to the internal test clock signals in the test mode. The at least one command signal corresponds to at least one operation timing parameter of the semiconductor memory device that is to be measured. The frequency multiplier may include a Phase Locked Loop (PLL) or a Delay Locked Loop (DLL).
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Chung Hoe-ju
Lee Yun-sang
Samsung Electronics Co,. Ltd.
Trimmings John P
Volentine & Whitt P.L.L.C.
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