Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2006-12-19
2009-08-11
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S196000, C365S189040, C365S189140, C365S233190
Reexamination Certificate
active
07573772
ABSTRACT:
A semiconductor memory device and a self-refresh method in which the semiconductor memory device includes a plurality of input/output ports having respective independent operation, a period of self-refresh through one of the plurality of input/output ports being subordinate to a kind of operation through another input/output port. Whereby, a refresh characteristic in a multi-port semiconductor memory device including a dual-port semiconductor memory device may be improved.
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Lee Ho-Cheol
Nam Kyung-Woo
F. Chau & Assoc. LLC
Le Thong Q
Samsung Electronics Co,. Ltd.
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