Semiconductor memory device and self-refresh method therefor

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S196000, C365S189040, C365S189140, C365S233190

Reexamination Certificate

active

07573772

ABSTRACT:
A semiconductor memory device and a self-refresh method in which the semiconductor memory device includes a plurality of input/output ports having respective independent operation, a period of self-refresh through one of the plurality of input/output ports being subordinate to a kind of operation through another input/output port. Whereby, a refresh characteristic in a multi-port semiconductor memory device including a dual-port semiconductor memory device may be improved.

REFERENCES:
patent: 5835965 (1998-11-01), Taylor et al.
patent: 5949733 (1999-09-01), Kotani et al.
patent: 6178517 (2001-01-01), Bertin et al.
patent: 7120761 (2006-10-01), Matsuzaki et al.
patent: 2002/0078311 (2002-06-01), Matsuzaki et al.
patent: 2003/0063515 (2003-04-01), Jain
patent: 2003/0135699 (2003-07-01), Matsuzaki et al.
patent: 2004/0090830 (2004-05-01), Lee et al.
patent: 2005/0276141 (2005-12-01), Pelley et al.
patent: 2005/0289293 (2005-12-01), Parris et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device and self-refresh method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and self-refresh method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and self-refresh method therefor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4082798

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.