Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2007-03-30
2010-02-09
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Testing
C365S222000, C365S189160
Reexamination Certificate
active
07660173
ABSTRACT:
A semiconductor memory device and its operating method are disclosed. The semiconductor memory device includes; a memory cell array including a plurality of memory cells selected in relation to a plurality of word lines and a plurality of bit lines, an address decoder selecting at least one word line in response to a refresh address and selecting all of the plurality of bit lines in response to a hidden write signal when a CBR refresh operation is requested during a test mode, a hidden write control circuit generating the hidden write signal when the CBR refresh operation is requested during the test mode, a refresh address generating circuit generating the refresh address when the CBR refresh operation is requested during the test mode, and a data input circuit applying data to all of the plurality of bit lines when the CBR refresh operation is requested during the test mode.
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Nguyen Van-Thu
Reidlinger R Lance
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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