Semiconductor memory device and methods of operation thereof

Details Semiconductor memory device and methods of operation thereof Semiconductor memory device and methods of operation thereof

2005-09-06

2005-09-06

Phan, Trong (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S149000

Reexamination Certificate

active

06940741

ABSTRACT:
A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.

REFERENCES:
patent: 3990057 (1976-11-01), Kumada
patent: 4158433 (1979-06-01), Peterson et al.
patent: 4437139 (1984-03-01), Howard
patent: 4772985 (1988-09-01), Yasumoto et al.
patent: 4807085 (1989-02-01), Yasukawa et al.
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 5006843 (1991-04-01), Hauer
patent: 5010518 (1991-04-01), Toda
patent: 5099305 (1992-03-01), Takenaka
patent: 5148526 (1992-09-01), Nishimukai et al.
patent: 5250827 (1993-10-01), Inoue et al.
patent: 5604881 (1997-02-01), Thomas
patent: 5867417 (1999-02-01), Wallace et al.
patent: 6285576 (2001-09-01), Kang
patent: 6285577 (2001-09-01), Nakamura
patent: 61-229350 (1986-10-01), None
patent: 63-201998 (1988-08-01), None
patent: 1-158691 (1989-05-01), None
patent: 1-251760 (1989-10-01), None
patent: 2-94473 (1990-04-01), None
patent: 2-158173 (1990-06-01), None
patent: 2-183569 (1990-07-01), None
patent: 2-232973 (1990-09-01), None
patent: 2-301093 (1990-12-01), None
patent: 3-142973 (1991-06-01), None
patent: 4-228191 (1992-08-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device and methods of operation thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and methods of operation thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and methods of operation thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3436857