Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-03-21
2011-11-01
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S233110, C365S148000, C365S207000
Reexamination Certificate
active
08050124
ABSTRACT:
A semiconductor memory device includes: plural bit lines connected with plural memory cells, respectively; plural transfer lines allocated in common to the plural bit lines; sense amplifiers (SA1) and (SA2) connected to these transfer lines, respectively; and a control circuit making the sense amplifier (SA2) perform a converting operation during an amplifying operation performed by the sense amplifier (SA1). Because the plural sense amplifiers are allocated to the same bit lines, and these are operated in parallel in this way, data can be read at a high speed.
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Fuji Yukio
Katagiri Satoshi
Tonomura Yasuko
Elpida Memory Inc.
Phung Anh
Reidlinger Lance
Sughrue & Mion, PLLC
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