Static information storage and retrieval – Systems using particular element – Ferroelectric
Patent
1991-07-31
1994-04-26
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Ferroelectric
365149, G11C 1122
Patent
active
053073045
ABSTRACT:
A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.
REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4914627 (1990-04-01), Eaton, Jr. et al.
patent: 5010518 (1991-04-01), Toda
Kobayashi Yutaka
Ohue Michio
Onose Hidekatsu
Saito Ryuichi
Hitachi , Ltd.
Popek Joseph A.
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