Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1998-07-07

1999-07-06

Brown, Peter Toby

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438243, 438254, 438386, H01L 21336

Patent

active

059207779

ABSTRACT:
A semiconductor memory device including a semiconductor substrate having a trench; a dielectric film formed on the substrate; a storage node electrode formed on the dielectric film; a first insulating film formed on the storage node electrode corresponding to the trench; a gate electrode formed on the first insulating film; a second insulating film formed on the gate electrode; a gate insulating film formed on at least one the side of gate electrode; a semiconductor layer formed on the at least one side of the first and second insulating films; and impurity regions formed in the semiconductor layer at the sides of the first and second insulating films. A manufacturing method including the steps of etching a semiconductor substrate to form a trench; forming a dielectric film and a conductive layer on the substrate; forming a first insulating film, a gate electrode, a second insulating film, and an interconnection layer, on the conductive layer corresponding to the trench; forming a semiconductor layer on the sides of the first and second insulating films; etching the conductive layer to form a storage node; and forming an impurity region in the semiconductor layer at the sides of the first and second insulating films.

REFERENCES:
patent: 5214296 (1993-05-01), Nakata et al.
patent: 5216266 (1993-06-01), Ozaki
patent: 5281837 (1994-01-01), Kohyama
patent: 5336917 (1994-08-01), Kohyama
patent: 5519236 (1996-05-01), Ozaki

Affiliated with

Also associated with

Rating

Semiconductor memory device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-906960