Semiconductor memory device and method of manufacturing the same

Details Semiconductor memory device and method of manufacturing the same Semiconductor memory device and method of manufacturing the same

1997-06-19

1999-09-07

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438258, H01C 218247

Patent

active

059500883

ABSTRACT:
A semiconductor memory device comprises a memory cell having a floating gate electrode for storing an electric charge and a switching a element for charging the floating gate electrode with the electric charge and for performing a switching function so as to discharge the electric charge of the floating gate electrode. A method of manufacturing a semiconductor memory device of this type comprises the steps of forming a field insulating film on a substrate of a first conductivity type; forming an impurity region of a second conductivity type on the substrate in a column direction between a plurality of the field insulating films; forming a first gate insulating film on the substrate; forming a floating gate electrode so that impurity regions of the first conductivity type and second conductivity type are repeated on the first gate insulating film and the field insulating film between a plurality of the impurity regions of the second conductivity type; forming a second gate insulating film on the first gate insulating film; forming a control electrode on the second gate insulating film between the field insulating films in a direction perpendicular with respect to the floating gate electrode; and forming a gate electrode of a passing transistor between a plurality of the control electrodes.

REFERENCES:
patent: 5446299 (1995-08-01), Acovic et al.
patent: 5554552 (1996-09-01), Chi
patent: 5753952 (1998-05-01), Mehrad

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