Semiconductor memory device and method of manufacturing the...

Details Semiconductor memory device and method of manufacturing the... Semiconductor memory device and method of manufacturing the...

2008-05-06

2008-05-06

Menz, Douglas M. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S257000

Reexamination Certificate

active

07368349

ABSTRACT:
A semiconductor memory device includes: a laminated body which has a floating-gate-forming groove and includes a semiconductor support layer, an impurity diffusion layer, an ion-implantation-damage protection film, and an interlayer insulating film; a floating-gate-insulating film; a floating gate disposed on the floating-gate-insulating film so as to be buried in the floating-gate-forming groove; a control-gate-insulating film disposed on a surface area of the floating gate; and a control gate disposed on the control-gate-insulating film above the floating gate, wherein the floating-gate-insulating film contacts with the semiconductor support layer at the bottom of the floating-gate-forming groove, the floating-gate-insulating film contacts with the impurity diffusion layer, the ion-implantation-damage protection film, and the interlayer insulating film at the side wall of the floating-gate-forming groove.

REFERENCES:
patent: 5990509 (1999-11-01), Burns, Jr. et al.
patent: 2002/0132416 (2002-09-01), Gamo et al.
patent: H10-189917 (1998-07-01), None
patent: 2002-033405 (2002-01-01), None
patent: 2002-280464 (2002-09-01), None

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