Semiconductor memory device and method of manufacturing for...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S396000, C438S508000

Reexamination Certificate

active

09008525

ABSTRACT:
A semiconductor memory device and method of manufacturing a semiconductor memory device that prevents oxidation of the bit lines caused by misalignment which may occur when patterning a storage electrode. An oxidation preventing layer, such as a nitride layer, is formed over the bit lines or in the contact holes to eliminate the diffusion of oxygen into the bit line structure, thereby preventing oxidation of the bit lines.

REFERENCES:
patent: 5126280 (1992-06-01), Chan et al.
patent: 5196364 (1993-03-01), Fazan et al.
patent: 5330614 (1994-07-01), Ahn
patent: 5444026 (1995-08-01), Kim et al.
patent: 5445999 (1995-08-01), Thakur et al.
patent: 5595928 (1997-01-01), Lu et al.
patent: 5763306 (1998-06-01), Tsai
patent: 5897983 (1999-04-01), Hirota et al.
patent: 6025247 (2000-02-01), Chang et al.
patent: 6268244 (2001-07-01), Park
patent: 0 539 233 (1993-04-01), None
patent: 08330539 (1996-12-01), None
Japanese Abstract—Manufacture Of Semiconductor Storage Device, 1 page; Publication No. 09139478; Publication Date: May 27, 1997.
International Preliminary Report On Patentability dated Aug. 17, 2005, for European Patent Application No. EP 04 07 8044.
European Office Action dated Jul. 27, 2006.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device and method of manufacturing for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and method of manufacturing for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and method of manufacturing for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3869309

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.