Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-16
2007-10-16
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000, C438S508000
Reexamination Certificate
active
09008525
ABSTRACT:
A semiconductor memory device and method of manufacturing a semiconductor memory device that prevents oxidation of the bit lines caused by misalignment which may occur when patterning a storage electrode. An oxidation preventing layer, such as a nitride layer, is formed over the bit lines or in the contact holes to eliminate the diffusion of oxygen into the bit line structure, thereby preventing oxidation of the bit lines.
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Jung Chul
Kang Chang-jin
Koo Bon-young
Nam Seok-woo
Noh Jun-yong
Harness Dickey & Pierce
Pham Hoai
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