Semiconductor memory device and method of forming the same

Details Semiconductor memory device and method of forming the same Semiconductor memory device and method of forming the same

2008-07-21

2010-06-01

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S253000

Reexamination Certificate

active

07728375

ABSTRACT:
Example embodiments relate to a semiconductor memory device and a method of forming the semiconductor memory device. The semiconductor memory device may include a first interlayer insulating layer on a semiconductor substrate. A bit line may be arranged in a first direction on the first interlayer insulating layer. A bit line contact pad may be disposed in the first interlayer insulating layer and electrically connected to the bit line. A storage contact pad may be disposed in the first interlayer insulating layer. A top surface of the bit line contact pad may be lower than a top surface of the storage contact pad.

REFERENCES:
patent: 7511327 (2009-03-01), Matsui et al.
patent: 1020060004467 (2006-01-01), None
patent: 1020070000719 (2007-01-01), None
patent: 100702028 (2007-03-01), None

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