Semiconductor memory device and method of fabricating the same

Details Semiconductor memory device and method of fabricating the same Semiconductor memory device and method of fabricating the same

2011-08-16

2011-08-16

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S315000, C257S316000, C257S317000, C438S264000

Reexamination Certificate

active

07998814

ABSTRACT:
A semiconductor memory devices and a method of fabricating the same includes sequentially stacking a tunnel insulating layer, a first nano-grain film, a conductive layer for a floating gate, and a second nano-grain film over a semiconductor substrate, forming a trench by etching the second nano-grain film, the conductive layer for the floating gate, the first nano-grain film, the tunnel insulating layer, and the semiconductor substrate, gap-filling the trench with an insulating layer, thus forming an isolation layer, and forming a third nano-grain film on sidewalls of the conductive layer for the floating gate.

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