Semiconductor memory device and method of driving same

Static information storage and retrieval – Read/write circuit – Precharge

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365190, G11C 700

Patent

active

055110304

ABSTRACT:
A semiconductor memory device according to the present invention is constructed in such a manner that two first and second memory circuits are respectively electrically connected to one sense amplifier provided between the memory circuits through changeover elements and equalize elements are electrically connected to their corresponding bit line pairs included in the memory circuits. Owing to this construction, an operation for resetting the bit line pair in the first memory circuit and the sense amplifier after completion of access to the first memory circuit and an operation for reading data into the bit line pair in the second memory circuit can be performed so as to overlap each other in time. It is therefore possible to obtain quick-access to the second memory circuit.

REFERENCES:
patent: 4656608 (1987-04-01), Aoyama
patent: 4813022 (1989-03-01), Matsui
patent: 5315555 (1994-05-01), Choi

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