Semiconductor memory device and method of controlling imprint co

Details Semiconductor memory device and method of controlling imprint co Semiconductor memory device and method of controlling imprint co

1997-10-31

1999-09-14

Dinh, Son T.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 1122

Patent

active

059532459

ABSTRACT:
A semiconductor memory device with a plurality of memory cells each having a ferroelectric material for storing a data item by its residual polarization is made usable selectably both as a RAM and as a ROM by controlling the so-called "imprint condition" of the ferroelectric material. When some of the memory cells are going to be used to a ROM or when the memory cells in an imprint condition are going to be used a RAM, heat and/or voltage pulses with an appropriate polarity are applied to the data-storing ferroelectric material to change its hysteresis characteristics.

REFERENCES:
patent: 5740100 (1998-04-01), Yoo
patent: 5745403 (1998-04-01), Taylor
patent: 5784310 (1998-07-01), Cachiaro et al.

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