Semiconductor memory device and method for repairing the same

Details Semiconductor memory device and method for repairing the same Semiconductor memory device and method for repairing the same

2011-01-25

2011-01-25

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S201000, C365S230030, C365S051000

Reexamination Certificate

active

07876632

ABSTRACT:
A semiconductor memory device includes a main cell array region, a first redundancy cell array region and a first dummy cell array region that are formed at one side of the main cell array region, and a second redundancy cell array region and a second dummy cell array region that are formed at the other side of the main cell array region. The first redundancy cell array region includes a first redundancy bitline, and the first dummy cell array region includes first dummy bitlines. The second redundancy cell array region includes a second redundancy bitline, and the second dummy cell array region includes second dummy bitlines. The first and second redundancy cell array regions are disposed closer to the main cell array region than the first and second dummy cell array regions.

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