Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-10-16
2007-10-16
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21648
Reexamination Certificate
active
11108929
ABSTRACT:
A semiconductor memory device includes a plurality of bit line structures arranged in parallel on a semiconductor substrate and having a plurality of bit lines and an insulating material surrounding the bit lines, an isolation layer formed in a portion in spaces between the bit line structures to define a predetermined active region and having substantially the same height as the bit line structures, a semiconductor layer formed in the predetermined active region surrounded by the bit line structures and the isolation layer and having substantially the same height as the bit line structures and the isolation layer, a plurality of word line structures arranged in parallel on the bit line structures, the isolation layer, and the semiconductor layer, and comprising a plurality of word lines and an insulating material surrounding the word lines, and source and drain regions formed in the semiconductor layer on either side of the word line structures.
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English language abstract of Korean Publication No. 2000-44673.
English language abstract of Korean Publication No. 2001-56239.
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