Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2006-08-29
2006-08-29
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S261000, C438S287000, C438S288000, C438S591000, C438S771000, C438S772000, C438S776000, C438S777000, C438S954000
Reexamination Certificate
active
07098147
ABSTRACT:
After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a silicon nitride film. Subsequently, a surface layer of the silicon nitride film is oxidized by a plasma oxidizing method to be replaced by an upper silicon oxide film. An ONO film as a multilayered insulating film composed of the lower silicon oxide film, the silicon nitride film, and the upper silicon oxide film is formed.
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Higashi Masahiko
Kajita Tatsuya
Nakamura Manabu
Nansei Hiroyuki
Sera Kentaro
Fujitsu Amd Semiconductor Limited
Smith Zandra V.
Thomas Toniae M.
Westerman, Hattori, Daniels & Adrian , LLP.
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