Semiconductor memory device and method for fabricating the same

Details Semiconductor memory device and method for fabricating the same Semiconductor memory device and method for fabricating the same

2006-09-26

2006-09-26

Chaudhari, Chandra (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S774000, C257SE27089

Reexamination Certificate

active

07112840

ABSTRACT:
The present invention relates to a semiconductor memory device and a method for fabricating the same. Particularly, the semiconductor memory device includes at least more than two capacitors to decrease the thickness of an insulation layer and increase the size of each capacitor, wherein the thickness of the insulation layer and the size of the capacitor are factors for increasing parasitic capacitance and leakage currents. Also, the two capacitors are arranged diagonally, thereby widening the width of each capacitor formed. Furthermore, in case of forming the double capacitors according to the preferred embodiment of the present invention, an additional reticle is not required to form the contact holes for each capacitor due to their inverted disposition relationship.

REFERENCES:
patent: 5541428 (1996-07-01), Nagatomo
patent: 5851875 (1998-12-01), Ping
patent: 6451651 (2002-09-01), Park et al.
patent: 6479341 (2002-11-01), Lu
patent: 6621110 (2003-09-01), Matsuoka et al.

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