Semiconductor memory device and method for fabricating...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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Details

C365S148000, C257S002000, C977S754000

Reexamination Certificate

active

07808816

ABSTRACT:
According to an aspect of the present invention, there is provided a semiconductor memory device, including, a semiconductor substrate, a phase-change element formed on the semiconductor substrate, the phase-change element including a phase-change film and electrode films, a joule heat portion contacting with the electrode film, the phase-change film being formed around the joule heat portion, and a radiation-shield film suppressing dissipation of thermal radiation emitted from the joule heat portion.

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patent: 2004-158854 (2004-06-01), None

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