Static information storage and retrieval – Read/write circuit – Precharge
Patent
1995-12-13
1997-11-18
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Precharge
365149, G11C 700
Patent
active
056894686
ABSTRACT:
A semiconductor memory device includes at least one memory block comprising: a plurality of word lines; a plurality of bit lines; and a plurality of memory cells each including a first switching element and a capacitor which is connected to the bit line via the first switching element, a node comprising a capacitance member having a predetermined capacitance, a second switching element for connecting the bit line to the node, a bit line precharge circuit, a capacitance member precharge circuit, and a control circuit for controlling the first switching element so as to connect electrically the memory cell which is coupled to the selected word line of a read operation to the corresponding bit line, and for controlling the second switching element so as to connect electrically the selected bit line of the read operation to the node comprising the precharged capacitance member, whereby changing the electric potential of the selected bit line so as to apply a predetermined voltage signal to the capacitor of the selected memory cell, whereby reading a data stored in the capacitor of the selected memory cell onto the selected bit line and the node.
REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 5202854 (1993-04-01), Koike
patent: 5444662 (1995-08-01), Tanaka et al.
patent: 5455786 (1995-10-01), Takeuchi et al.
Nelms David C.
Nguyen Hien
Sharp Kabushiki Kaisha
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