Electrical computers and digital processing systems: memory – Storage accessing and control – Access timing
Reexamination Certificate
2011-08-30
2011-08-30
Bataille, Pierre-Michel (Department: 2186)
Electrical computers and digital processing systems: memory
Storage accessing and control
Access timing
C711S103000, C711SE12001
Reexamination Certificate
active
08010765
ABSTRACT:
In an embodiment, a semiconductor memory device includes a clock latency that can be controlled responsive to whether or not an output order of burst data is reordered. The semiconductor memory device may comprise a control unit and a latency control unit. The control unit may generate a latency control signal having a logic level that varies depending on whether or not an output order of burst data is reordered. The latency control unit may control a latency value in response to the latency control signal. The semiconductor memory device and the method of controlling the latency value responsive to a reordering of the burst data allow for an optimally fast memory access time.
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English language abstract of Korean Publication No. 2002-0014563.
English language abstract of Korean Publication No. 10-0422954.
English language abstract of Korean Publication No. 2005-0101034.
Bae Won-Il
Choi Joo-Sun
Jung Won-Chang
Lee Hi-Choon
Park Chul-Woo
Bataille Pierre-Michel
Muir Patent Consulting, PLLC
Samsung Electronics Co,. Ltd.
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