Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2007-07-23

2008-08-12

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S591000, C438S593000, C257S324000, C257SE29309

Reexamination Certificate

active

07410857

ABSTRACT:
After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

REFERENCES:
patent: 7253046 (2007-08-01), Higashi et al.
patent: 2002/0000592 (2002-01-01), Fujiwara
patent: 52-058489 (1977-05-01), None
patent: 58-023482 (1983-02-01), None
patent: 58-093289 (1983-06-01), None
patent: 01-201965 (1989-08-01), None
patent: 2001-093995 (2001-04-01), None
patent: WO 99/60631 (1999-11-01), None
Lusky et al; “Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM™ Device;” IEEE Electron Device Letters, vol. 22, No. 11 (Nov. 2001) 556-558.
International Search Report dated Dec. 2, 2003.

Affiliated with

Also associated with

Rating

Semiconductor memory device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4004125