Semiconductor memory device and manufacturing method thereof

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S261000, C438S591000, C438S593000, C257S324000, C257SE29309

Reexamination Certificate

active

07410857

ABSTRACT:
After an ONO film in which a silicon nitride film (22) formed by a plasma nitriding method using a plasma processor having a radial line slot antenna is sandwiched by silicon oxide films (21), (23), a bit line diffusion layer (17) is formed in a memory cell array region (11) by an ion implantation as a resist pattern (16) taken as a mask, then lattice defects are given to the silicon nitride film (22) by a further ion implantation. Accordingly, a highly reliable semiconductor memory device can be realized, in which a high quality nitride film is formed in a low temperature condition, in addition, the nitride film can be used as a charge trap film having a charge capture function sufficiently adaptable for a miniaturization and a high integration which are recent demands.

REFERENCES:
patent: 7253046 (2007-08-01), Higashi et al.
patent: 2002/0000592 (2002-01-01), Fujiwara
patent: 52-058489 (1977-05-01), None
patent: 58-023482 (1983-02-01), None
patent: 58-093289 (1983-06-01), None
patent: 01-201965 (1989-08-01), None
patent: 2001-093995 (2001-04-01), None
patent: WO 99/60631 (1999-11-01), None
Lusky et al; “Characterization of Channel Hot Electron Injection by the Subthreshold Slope of NROM™ Device;” IEEE Electron Device Letters, vol. 22, No. 11 (Nov. 2001) 556-558.
International Search Report dated Dec. 2, 2003.

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