Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

2006-05-30

2006-05-30

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S532000

Reexamination Certificate

active

07052955

ABSTRACT:
A method for manufacturing a semiconductor device including an electrode having a lower silicon layer and an upper silicon layer which is formed on the lower silicon layer. A concentration of impurities in the upper silicon layer is higher than a concentration of impurities in the lower silicon layer.

REFERENCES:
patent: 4951175 (1990-08-01), Kurosawa et al.
patent: 5032528 (1991-07-01), Asao et al.
patent: 5336922 (1994-08-01), Sakamoto
patent: 5346844 (1994-09-01), Cho et al.
patent: 5411912 (1995-05-01), Sakamoto
patent: 5412237 (1995-05-01), Komori et al.
patent: 5444278 (1995-08-01), Katayama
patent: 5578524 (1996-11-01), Fukase et al.
patent: 5652168 (1997-07-01), Komori et al.
patent: 5652180 (1997-07-01), Shinriki et al.
patent: 5821158 (1998-10-01), Shishiguchi
patent: 5821587 (1998-10-01), Jeong
patent: 5905294 (1999-05-01), Kushida
patent: 5959326 (1999-09-01), Aiso et al.
patent: 6063703 (2000-05-01), Shinriki et al.
patent: 6566188 (2003-05-01), Kim et al.
patent: 6589885 (2003-07-01), Yo
patent: 6849890 (2005-02-01), Kokubun
patent: 0 734 060 (1996-09-01), None
patent: 5-218332 (1993-08-01), None
patent: 5-259405 (1993-10-01), None
patent: 5-315567 (1993-11-01), None
patent: 6-21479 (1994-01-01), None
patent: 7-235616 (1995-09-01), None
patent: 8-264732 (1996-10-01), None
patent: 9-246205 (1997-09-01), None
patent: 9-298278 (1997-11-01), None
patent: 10-209398 (1998-08-01), None
patent: 10-294367 (1998-11-01), None
patent: 11-214661 (1999-08-01), None

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