Semiconductor memory device and data access method for...

Details Semiconductor memory device and data access method for... Semiconductor memory device and data access method for...

2005-01-18

2005-01-18

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Read/write circuit

Precharge

C365S205000, C365S230030

Reexamination Certificate

active

06845051

ABSTRACT:
There are provided a semiconductor memory device and a data access method therefor, which can reduce current charged/discharged to bit lines because of charge recycling in order to improve the data holding characteristic of a cell capacitor and to reduce current consumption in stand-by mode. For the restore operation, a higher-voltage-side drive wire of the sense amplifier group is switched to a second voltage (V2). Charge stored in a recycling capacitor is used for charging bit lines from an equalizing voltage to the second voltage (V2). Next, the higher-voltage-side drive wire is switched from the second voltage (V2) to a first voltage (V1) so that a memory cell is restored. For the equalizing operation, the higher-voltage-side drive wire is switched to the second voltage (V2), and the charge in the bit lines is returned to the recycling capacitor. After that, the sense amplifying operation is terminated, and the bit line pair is shorted so as to be equalized to ½ of the second voltage (V2).

REFERENCES:
patent: 5872737 (1999-02-01), Tsuruda et al.
patent: 6347058 (2002-02-01), Houghton et al.
patent: 6519198 (2003-02-01), Suematsu et al.
patent: 8-241968 (1996-09-01), None
patent: 8-249885 (1996-09-01), None
patent: 8-315576 (1996-11-01), None

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