Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-07-23
2009-10-20
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S207000
Reexamination Certificate
active
07606094
ABSTRACT:
A semiconductor memory device of the invention has memory cells arranged at intersections of bit lines and word lines, and comprises a sense amplifier for amplifying a minute potential difference appearing on a bit line pair; a power supply line pair including first and second power supply lines for supplying first and second potentials to the sense amplifier; a pre-charge power supply line for supplying a predetermined pre-charge potential; a power supply line equalize circuit for setting the first and second potentials at the same potential based on the pre-charge potential; a current limit circuit inserted in series in a predetermined current path from the pre-charge power supply line to the power supply line pair; and switch means capable of switching whether or not current flowing from the pre-charge power supply line to the power supply line pair is limited by the current limit circuit based on a control signal.
REFERENCES:
patent: 5949729 (1999-09-01), Suyama et al.
patent: 6018481 (2000-01-01), Shiratake
patent: 6144599 (2000-11-01), Akita et al.
patent: 6343038 (2002-01-01), Makino et al.
patent: 7394709 (2008-07-01), Mori et al.
patent: 11-149793 (1999-06-01), None
patent: 2000-182374 (2000-06-01), None
patent: 2001-75498 (2001-03-01), None
patent: 2001-76498 (2001-03-01), None
Kagami Akihiko
Seno Masski
Elpida Memory Inc.
Phung Anh
Sughrue & Mion, PLLC
LandOfFree
Semiconductor memory device and control method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device and control method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device and control method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4123539