Static information storage and retrieval – Read/write circuit – Precharge
Patent
1997-10-07
1998-10-13
Le, Vu A.
Static information storage and retrieval
Read/write circuit
Precharge
365204, 365190, G11C 700
Patent
active
058222600
ABSTRACT:
Disclosed is a semiconductor memory device capable of shortening a precharge time and increasing a read out speed by increasing a difference potential between complementary read out data relating to a sensitivity of a data amplifier. In the semiconductor memory device, provided is a precharge control circuit which receives a precharge enable signal for controlling a precharge operation of a pair of read out signal lines, detects potentials of first and second reading-out signals generated on the pair of read out signal lines, and controls turning-on/off of first and second transistors which control a precharge operation for said pair of read out signal lines.
REFERENCES:
patent: 5636169 (1997-06-01), Oh
patent: 5650970 (1997-07-01), Kai
patent: 5703816 (1997-12-01), Nam et al.
Le Vu A.
NEC Corporation
LandOfFree
Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-320345