Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2011-08-30

2011-08-30

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S230030, C365S203000, C365S207000, C365S189070, C365S210100

Reexamination Certificate

active

08009488

ABSTRACT:
A semiconductor memory device includes a plurality of memory cell array blocks connected to word lines, source lines, and bit lines, each memory cell array including memory cells each having a transistor with a floating body, a reference voltage generator configured to have a reference memory cell and generate a reference voltage for bit line sensing corresponding to a current flowing into a reference memory cell during a data read operation, first and second prechargers configured to precharge a bit line connected to non-selected memory cells to the reference voltage in response to first and second precharge control signals during the data read operation, and a sense amplifier configured to sense and amplify a voltage difference between a bit line connected to the selected memory cells and a bit line connected to the non-selected memory cells during the data read operation.

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