Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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Details

365205, 365207, 365208, G11C 700

Patent

active

053114698

ABSTRACT:
A semiconductor memory device including: a memory cell array having at least one cell array unit, the cell array unit including a plurality of memory cells; a decoder for selecting at least one the memory cell in accordance with an externally supplied address; an input/output terminal for outputting data read from the selected memory cell and for receiving data supplied externally and sending the data to the selected memory cell; at least one data line for connecting the input/output terminal to each the cell array unit; sense amplifiers serially connected to each the data line in a multiple stage configuration for amplifying the read data; a write buffer connected in parallel with one of the sense amplifiers connected to each data line; by-pass switching elements connected between input and output terminals of the other sense amplifiers connected to each the data line; and a control circuit for applying an on-signal to at least one by-pass switching element when writing data, the on-signal turning on at least one by-pass switching element.

REFERENCES:
patent: 4891792 (1990-01-01), Hanamura et al.
patent: 5023841 (1991-06-01), Akrout et al.
patent: 5068831 (1991-11-01), Hoshi et al.

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