Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Precharge

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Details

365207, 365205, 365202, G11C 1134

Patent

active

054466946

ABSTRACT:
A semiconductor memory device of the present invention comprises an internal power supplying circuit electrically connected to an external power supply having an external source potential and for supplying an internal potential lower than the external source potential, a precharging circuit for supplying a half potential of the internal potential to each of memory cells and bit lines, and a switching circuit electrically connected between each bit line and the precharging circuit and controlled based on an equalize signal output from a control circuit and having the same potential as the external source potential. The semiconductor memory device of such a type that even if a potential on each bit line increases excessively, such a potential does not exert an influence on each memory cell, can be realized owing to the above structure.

REFERENCES:
patent: 4709353 (1987-11-01), Shimohigashi et al.
patent: 5337270 (1994-08-01), Kawata et al.

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