Semiconductor memory device

Static information storage and retrieval – Read/write circuit – Erase

Patent

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Details

365185, 365 63, G11C 700

Patent

active

052951057

ABSTRACT:
This invention provides a semiconductor memory device comprising a plurality of memory cells having a common source diffused region extending in a specified direction, a word line that extends in parallel with the common source diffused region and is connected to each gate of the plurality of memory cells, a first source interconnection composed of a first metal interconnection layer electrically connected to the common source diffused region, and a second source interconnection that extends in parallel with the word line and is composed of a second metal interconnection layer electrically connected to the first source interconnection.

REFERENCES:
patent: 4949309 (1990-08-01), Rao

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