Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-18
1999-11-09
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257546, H01L 2362, H01L 2900
Patent
active
059820071
ABSTRACT:
A semiconductor memory device is provided for preventing loss of cell data and reduction of a standby current. The semiconductor memory device includes a first conductivity type semiconductor substrate connected to a ground voltage, a first well region of second conductivity type formed over the semiconductor substrate and connected to the ground voltage, a second well region of the first conductivity type embedded in the first well region, a first impurity region of the second conductivity type embedded in the second well region and connected to an input/output pad, and one or more additional impurity regions embedded in the second well region separately from the first impurity region, the one or more additional impurity regions being connected to the ground voltage.
REFERENCES:
patent: 4712152 (1987-12-01), Iio
patent: 5181091 (1993-01-01), Harrington, III et al.
patent: 5684321 (1997-11-01), Okamura
Kim Gyeong-Hee
Lee Soo-cheol
Nadav Ori
Samsung Electronics Co,. Ltd.
Thomas Tom
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