Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1980-07-24

1982-10-19

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365174, G11C 1140, G11C 1124

Patent

active

043553745

ABSTRACT:
A semiconductor memory comprising a memory cell disposed on a p-type semiconductor substrate and including an insulated-gate field effect transistor and a storage capacitor. The storage capacitor comprises: an insulator capacitor including a first electrode disposed on the substrate, a film of Si.sub.3 N.sub.4 disposed on the first electrode, and a second electrode disposed on the Si.sub.3 N.sub.4 film; and a pn junction capacitor including a first n-type impurity region for constituting either the source or drain of the insulated-gate field effect transistor, and a second p-type impurity region disposed in contact with the first impurity region and having a higher impurity concentration than the substrate.

REFERENCES:
patent: 4164751 (1979-08-01), Tasch, Jr.

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1341297