Semiconductor memory device of redundant circuit system

Static information storage and retrieval – Read/write circuit – Bad bit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3652257, G11C 2900

Patent

active

060943866

ABSTRACT:
A semiconductor memory device includes a memory cell array including memory cells arranged in the form of a matrix; a redundant cell array including redundant cells arranged for relieving a defective memory cell of the memory cell array; a defective address memory circuit including first and second memory circuits using different programming methods for storing an address of the defective memory cell of the memory cell array; and a substitution control circuit for controlling the substitution of one of the redundant cells of the redundant cell array for the defective memory cell of the memory cell array on the basis of memory data of the defective address memory circuit. Thus, it is possible to provide a semiconductor memory device capable of reducing the area occupied by a defective address memory circuit and surely carrying out defect relief, and a method for producing the same.

REFERENCES:
patent: 5471426 (1995-11-01), McClure
patent: 5590085 (1996-12-01), Yuh et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device of redundant circuit system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device of redundant circuit system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device of redundant circuit system will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1341298

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.