Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

1990-11-26

1992-10-13

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

36518905, G11C 1300

Patent

active

051557029

ABSTRACT:
The substrate current generated during the operation of a bit line equalizer can be reduced by adapting PMOS transistors which have a smaller ionization coefficient in its carrier of a hole than NMOS transistors for maintaining a pair of bit lines at the same potential before a sense amplifier is operated. Thus, the substrate voltage can be stabilized by reducing the substrate current in the operation of the bit line equalizer.

REFERENCES:
patent: 4999814 (1991-03-01), Hashimoto

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