Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1998-02-20
1999-03-30
Dinh, Son T.
Static information storage and retrieval
Read/write circuit
Bad bit
36523003, G11C 700
Patent
active
058897127
ABSTRACT:
A semiconductor memory device is disclosed, in which a memory region which can not be used due to existence of defective bit line is reduced. In a DRAM of a double word line system, when there is a defective bit line 103 in a certain block thereof, only a memory region 104 in a right or left portion of the block to which the defective bit line 103 belongs is made invalid and a region on the other side is made valid. In this case, clusters are constructed with the valid memory region by converting the uppermost bits of a row address and the uppermost bits of a column address by means of an address conversion circuit.
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patent: 5761138 (1998-01-01), Lee et al.
patent: 5798973 (1998-08-01), Isa
patent: 5801999 (1998-09-01), Satou et al.
Dinh Son T.
NEC Corporation
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